Effect of crystallographic orientation on the dislocation structure development in ion implanted Si |
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| Authors: | F F Komarov V D Kuryazov V S Solov'ev S Yu Shiryaev |
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| Institution: | Institute of Applied Physics Problems, Be***Iorussian University , Minsk |
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| Abstract: | Transmission electron microscopy (TEM) has been employed to study the damage structure of P+-implanted (001) and (111) Si annealed in inert and oxidizing atmospheres. Both the dislocation structure composition and the density of misfit dislocations have been found to be strongly dependent upon the crystal orientation. Role of the crystal orientation in the dislocation structure development has been discussed. |
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