Annealing of ion-implanted Ga0.47In0.53As |
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| Authors: | M. A. Shahid M. Anjum B. J. Sealy |
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| Affiliation: | Department of Electronic and Electrical Engineering , University of Surrey , Guildford, Surrey, GU2 5XH, U.K. |
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| Abstract: | We have investigated annealing of ion-implanted GaInAs using transmission electron microscopy. We have found that the best condition for the post-implantation anneals for GalnAs is a 30 second anneal at a temperature of 700–800°C. This produces a material similar in character to the untreated GaInAs. Anneals for longer than 30 seconds produce crystal defects becoming increasingly complex with time for similar temperatures. |
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