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Thermal redistribution of indium in amorphous silicon layers |
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| Authors: | R G Elliman |
| Institution: | Department of Electrical Engineering , University of Salford , Salford, M5 4WT, U.K. |
| Abstract: | A new impurity redistribution mechanism is reported for low temperature annealing (525°C) of (100) Si samples implanted with high indium doses. The redistribution is a strong function of implant dose and is believed to be stress related. |
| Keywords: | defects SiC epitaxial layers radiation damage |