Location of 125I implanted in silicon and germanium |
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| Authors: | I. Dézsi R. Coussement G. Langouche M. Van Rossum |
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| Affiliation: | 1. Central Research Institute for Physics , H-1525 , Budapest , Hungary;2. Instituut voor Kern-en Stralingsfysika , K.U. Leuven, B-3030 , Leuven , Belgium;3. Research Associate, N.F.W.O. |
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| Abstract: | A Mössbauer study of 125I implanted into silicon and germanium lattices with various dose values was performed. The spectra measured after thermal annealing suggested an off-substitutional site population for I in the silicon lattice. The Mössbauer spectra showed no difference in the hyperfine splitting of 125Te after electron capture of 125I in comparison with that obtained after the isomeric transition of implanted 125mTe. The site populations of Te and I atoms after implantation and thermal annealings were concluded as being the same. |
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