X-ray absorption of nitrogen-doped amorphous carbon films for determining sp2/sp3 bonding concentrations |
| |
| Institution: | 1. School of Physics, University of Melbourne, Victoria 3010, Australia;1. Energy Materials & Surface Science Laboratory, Solar Energy Research Center, School of Chemical Engineering, Chonbuk National University, Jeonju, 561-756, Republic of Korea;2. New & Renewable Energy Materials Development Center (NewREC), Chonbuk National University, Jeonbuk, Republic of Korea;1. International Chinese-Belorussian Scientific Laboratory on Vacuum-Plasma Technology, College of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;2. Key Lab of Soft Chemistry and Functional Materials of Ministry of Education, Nanjing University of Science and Technology, Nanjing 210094, China;3. National Research Tomsk Polytechnic University, 30, Lenin Avenue, Tomsk 634050, Russia;4. Francisk Skorina Gomel State University, 104, Sovetskaya Street, Gomel 246019, Belarus;1. School of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan 411201, China;2. State Key Laboratory of Hollow Fiber Membrane Materials and Processes, School of Materials Science and Engineering, Tianjin Polytechnic University, Tianjin 300387, China;1. Dept. of the Geophysical Sciences, 5734 S. Ellis Ave, The University of Chicago, Chicago, IL 60637, United States;2. Center for Advanced Radiation Sources (CARS), 5640 S. Ellis Ave, The University of Chicago, Chicago, IL 60637, United States;3. The Enrico Fermi Institute, 5640 S. Ellis Ave, The University of Chicago, Chicago, IL 60637, United States |
| |
| Abstract: | A method of analyzing X-ray absorption spectra of nitrogen-doped amorphous carbon (a-C) samples was developed to determine their sp2 bonding concentrations. The films under consideration are simultaneously deposited onto polytetrafluoroethylene (PTFE) polymer or silicon wafer substrates by hot wire plasma sputtering of graphite. sp2 bonding concentrations of a-C films deposited on PTFE increase from 74% to 93% with growing nitrogen doping. Silicon substrate films yield the same general trend, but show that the near surface electronic structure of a-C films depends on the substrate. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
