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Electronic structure of the Au–Si(1 1 1) interface as a function of Au coverage
Institution:1. School of Physics, University of Melbourne, Victoria 3010, Australia;1. Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan;2. Department of Precision Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 153-8904, Japan;3. National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-kitamachi, Koganei-shi, Tokyo 184-8795, Japan;1. School of Aeronautics and Astronautics, Purdue University, 701 W. Stadium Ave, West Lafayette, IN 47907-2045, USA;2. Seconda Facoltà di Ingegneria, Alma Mater Studiorum University of Bologna, via Fontanelle 40, 47100 Forlì, FC, Italy;3. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA;1. Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Republic of Korea;2. Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8565, Japan;1. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;2. Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-Dong, Nowon-Gu, Seoul 139-701, South Korea
Abstract:We have investigated the Au–Si(1 1 1) interface as a function of the Au coverage by the core-level photoemission spectroscopy. With increasing the Au coverage, the spectral features in the Si 2p core-level changed remarkably and some fine structures in both Si 2p and Au 4f spectra were observed. Based on the curve fitting analysis, the Si 2p and Au 4f spectra at more than 20 Å Au coverage were decomposed into three chemically different components, respectively. The assignments of their components were performed. In addition, we have compared these results for the Au–Si(1 1 1) interface with our previous study for the Au–Si(1 0 0) interface. It was found that the electronic structures for the Au–Si(1 1 1) interface is essentially identical to those of the Au–Si(1 0 0) interface except at the initial Au deposition.
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