| 用椭圆偏光法研究硅中砷离子注入的损伤和退火效应 |
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| 引用本文： | 莫党,卢因诚,李旦晖,刘尚合,卢武星. 用椭圆偏光法研究硅中砷离子注入的损伤和退火效应[J]. 物理学报, 1980, 29(9): 1214-1216 |
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| 作者姓名： | 莫党 卢因诚 李旦晖 刘尚合 卢武星 |
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| 作者单位： | (1)北京半导体器件研究所; (2)北京师范大学; (3)中山大学物理系 |
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| 摘 要： | 我们用椭圆偏光法对As+离子注入Si的损伤和退火效应进行了测量。对As+注入能量为150keV、注入剂量为1016cm-2的情况,测得的折射率分布呈现平台型,表明出现了非晶质层。在600—700℃间有一转变温度,高于此温度退火,可消除非晶质层。实验结果表明椭圆偏光法亦是测定辐射损伤的有用工具。关键词：
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| 收稿时间： | 1979-11-27 |
ELLIPSOMETRIC STUDY OF DAMAGE AND ANNEALING IN ARSENIC ION IMPLANTED SILICON |
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| MO DANG,LU YIN-CHENG,LI DAN-HUI,LIU SHANG-HE and LU WU-XING. ELLIPSOMETRIC STUDY OF DAMAGE AND ANNEALING IN ARSENIC ION IMPLANTED SILICON[J]. Acta Physica Sinica, 1980, 29(9): 1214-1216 |
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| Authors: | MO DANG LU YIN-CHENG LI DAN-HUI LIU SHANG-HE LU WU-XING |
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| Abstract: | The ellipsometric method has been developed to investigate the radiation damage and annealing effect in As ion implanted silicon. For 1×1016 cm-2, 150 keV As ion implantation, the refractive index-depth profile exhibits a plateau form, indicating the existence of an amorphous layer. The annealing temperature used to remove amorphous layer must be about 700℃ or higher. The experimental results show that the ellipso-meter is one of the useful tools for radiation damage determinations. |
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