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Improvement of Nd:GGG crystal growth process under dynamic atmosphere composition
Affiliation:1. Iranian National Center of Laser Science and Technology, Tehran, P. O. Box 14665-576, Iran;2. Laser and Optics Research School, Tehran, P.O. Box 14155-1339, Iran;1. Institute of Chemistry, Hebrew University of Jerusalem, Givat-Ram, Jerusalem 91904, Israel;2. Institute of Physics, Maria Curie-Sklodowska University, Pl. M. Curie-Skłodowsskiej 1, 20-031 Lublin, Poland;3. I. V. Grebenshchikov Institute of the Chemistry of Silicates, Russian Academy of Sciences, Nab. Makarova, 2, Liter B, Saint-Petersburg 199034, Russia;4. Institute of Physics, Wroclaw University of Technology, W. Wyspianskiego 27, 50-370 Wroclaw, Poland;1. Laboratory “Magnetic Metamaterials”, Saratov State University, Saratov 410012, Russia;2. Kotel’nikov Institute of Radioengineering and Electronics, RAS, Moscow 125009, Russia;1. Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603110, Tamilnadu, India;2. Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, Tamilnadu, India;1. Neonatal Intensive Care Unit, Department of Clinical Science and Comunity Health, Fondazione IRCCS Cà Granda Ospedale Maggiore Policlinico, University of Milan, Milan, Italy;2. Maternal and Child Health Department, Del Ponte Hospital, A.O. Di Circolo Fondazione Macchi, Varese, Italy;1. Prokhorov General Physics Institute of the Russian Academy of Sciences, Vavilov Str. 38, 119991 Moscow, Russia;2. National University of Science and Technology (MISIS), Leninskiy Prospect 4, 119049 Moscow, Russia;3. Ogarev Mordovia State University, 68 Bolshevistskaya Str., Saransk 430005, Republic of Mordovia, Russia
Abstract:In this paper, the temperature dependency of the required oxygen on the quality of Nd:GGG crystal during the growth process has been investigated. Based on the thermodynamic analysis, the oxygen partial pressure in the surrounding vapor phase should be as low as possible through heating the raw material at lower temperatures to prevent the oxidation of iridium to IrO2 (s). In order to eliminate the volatilization of Ga2O3, the oxygen was charged into the gas atmosphere (N2) near the Nd:GGG melting point. Powder X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM) were employed to characterize the crystal quality under different growth atmosphere. The experimental results confirm the validity of thermodynamic calculations. It was predicted that charging the required oxygen at about 1950 K could reduce the iridium loss rate to about 36%. Consequently, it would be expected to acquire more favorable Nd:GGG crystals with quite improved properties by applying the accurate growth conditions.
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