Diamond films grown without seeding treatment and bias by hot-filament CVD system |
| |
| Institution: | 1. Department of Physics, COMSATS Institute of Information Technology (CIIT), 44000 Park Road, Islamabad, Pakistan;2. Department of Metallurgical and Materials Engineering, Istanbul Technical University, 34469 Maslak, Istanbul, Turkey;1. University of Tunis El Manar, National School of Engineers of Tunis, Le Belvedere, 1002 Tunis, Tunisia;2. University of Hail, College of Engineering of Hail, 81481 Hail, Saudi Arabia;3. University of Hail, College of Business Administration, Department of MIS, Saudi Arabia;1. Department of Mechanical Engineering, PRIST UNIVERSITY, Thanjavur 613 403, Tamil Nadu, India;2. Centre for Automotive Materials, Department of Automobile Engineering, SRM Institute of Science and Technology, Kattankulathur, Chennai 603203, Tamil Nadu, India |
| |
| Abstract: | Diamond film growth without seeding treatment has been the subject of numerous studies. In the present study, diamond films with/without seeding treatment were grown on silicon using hot-filament chemical vapour deposition. An inexpensive and simple approach, namely, “dry ultrasonic treatment”, was introduced in which full coverage of diamond film was achieved on unseeded substrate. For comparison, one substrate was seeded with 5 μm diamond particles, prior to deposition. The resulting diamond films were examined through standard characterization tools and distinct features were observed in each film. Here we present the results of uniform and high purity diamond film, free from nano-sized grains, which is grown without seeding treatment and is expected to be potential candidate for electro-optical applications, particularly as heat sinks. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
