Room-temperature ferromagnetism in silicon oxide/silicon nitride composite films |
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| Affiliation: | 1. Departamento de Física, Universidad Nacional de Colombia, Sede Manizales, A.A. 127, Colombia;2. Grupo de las Propiedades Ópticas de los Materiales (POM), Colombia;1. School of Metallurgy and Environment, Central South University, Changsha, Hunan, 410083, PR China;2. Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin, 300072, PR China;3. Institute for Superconducting & Electronic Materials (ISEM), Australian Institute of Innovative Materials (AIIM), Innovation Campus, Squires Way, University of Wollongong, NSW, 2522, Australia;4. College of Physics and Materials Science, Tianjin Normal University, No 393 Bin Shui West Road, Xiqing District, Tianjin, 300387, PR China;1. Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC;2. Department of Greenergy, National University of Tainan, Tainan 701, Taiwan, ROC;3. Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan, ROC;4. Hierarchical Green-Energy Materials (Hi-GEM) Research Center, National Cheng Kung University, Tainan 70101, Taiwan, ROC;5. Experimental Facility DivisionX-ray Scattering Group, National Synchrotron Radiation Research Center, Hsinchu 101, Taiwan, ROC |
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| Abstract: | Room-temperature ferromagnetism has been observed in silicon oxide/silicon nitride composite films formed on Si substrates at different substrate temperatures, and the ferromagnetic properties of the samples have been found to depend on the silicon nitride content of the films. It is proposed that the ferromagnetism is related to the interface states between the silicon oxide particles and silicon nitride particles. The saturation magnetization (MS) reached its maximum value in the film produced at a substrate temperature of 400 °C. A further study on the magnetic properties of the film has been carried out using first-principles calculations based on the density functional theory. The calculations suggest that the magnetic moments of the film originate from N 2p and Si 2p states in the vicinity of the hetoro-interface. |
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