Dielectric properties of barium zirconate titanate (BZT) ceramics tailored by different donors for high voltage applications |
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| Institution: | 1. Department of Materials Science & Engineering, Northeastern University at Qinhuangdao, Qinhuangdao, Hebei Province 066004, PR China;2. Department of Materials Science & Engineering and State Key Laboratory of Fine Ceramics and New Processing, Tsinghua University, Beijing 100084, PR China;3. Department of Imaging and Applied Physics, Curtin University, GPO Box U 1987, Perth 6845, WA, Australia;1. Nanophotonics laboratory, Department of Physics, C.V. Raman College of Engineering, Bhubaneswar, Odisha 752054, India;2. Department of Physics, Birla Institute of Technology, Mesra, Ranchi 835215, India;1. Department of Physics, C.V. Raman College of Engineering, Bhubaneswar, Odisha 752054, India;2. School of Physics, Sambalpur University, Jyoti Vihar Sambalpur, Odisha 768019, India;3. Colloids & Materials Chemistry, Institute of Minerals and Materials Technology, Bhubaneswar, Odisha 751013, India |
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| Abstract: | The dielectric properties of BZT ceramics with different Zr contents and donor types are studied. It is shown that the large enhancement of the dielectric permittivity is achieved accompanying with the remarkable shift of Curie temperature in the samples doped with donors such as La, Nd, Sm, Eu, Dy, and Yb, whereas the results are different in them doped with other type of donors such as Ce and Y. The shift of Curie temperature is related to the ionic radii of the doped donors. A smaller ion results in a greater shift. The dielectric properties of BZT with different doping levels of Yb are also studied and showed that there is a preferable doping content as Yb ∼0.1% to make the material with the highest permittivity, ɛ ∼25,800, withstand voltage >∼3.5 kV/mm. |
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