| 芯片制造过程中的电化学侵蚀控制 |
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| 引用本文： | 聂圆燕,郭晶磊,陈海峰.芯片制造过程中的电化学侵蚀控制[J].电子与封装,2010,10(1):32-34. |
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| 作者姓名： | 聂圆燕 郭晶磊 陈海峰 |
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| 作者单位： | 中国电子科技集团公司第58研究所,无锡,214035 |
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| 摘 要： | 芯片金属键合孔上的电化学侵蚀会引起封装时键合接触不好等问题,因此在芯片加工时消除电化学侵蚀非常重要。文章通过一个解决侵蚀斑问题的案例,找到了引起侵蚀斑的根本原因和有效的解决方法,阐述了电化学侵蚀反应的理论模型。通过严控冲水后和甩干工艺间的间隔时间可以彻底解决由于湿法清洗工艺引起的电化学腐蚀。
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| 关 键 词： | 电化学侵蚀 侵蚀斑 势差 湿法清洗工艺 |
Control of Galvanic Corrosion in Wafer Fabrication |
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| NIE Yuan-yan,GUO Jing-lei,CHEN Hai-feng.Control of Galvanic Corrosion in Wafer Fabrication[J].Electronics & Packaging,2010,10(1):32-34. |
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| Authors: | NIE Yuan-yan GUO Jing-lei CHEN Hai-feng |
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| Institution: | The 58th Research Institute of China Electronic Technology Group Corporation;Wuxi 214035;China |
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| Abstract: | Galvanic corrosion on microchip Al bondpads will cause non-stick bondpads at assembly process.Thus it is very important to eliminate galvanic corrosion in wafer fabrication.In this paper we will present a case study on pitting problem.Possible root cause and solutions will be discussed.And the theoretical model and characteristics of galvanic corrosion will be studied.To eliminate Galvanic corrosion caused by DI water over-cleaning,the time between Rinsing process and drying process is strictly controled. |
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| Keywords: | galvanic corrosion pitting potential difference DI water cleaning process |
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