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Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications
Authors:LV Hang-Bing  ZHOU Peng  FU Xiu-Feng  YIN Ming  SONG Ya-Li  TANG Li  TANG Ting-Ao  LIN Yin-Yin
Affiliation:School of Microelectronics and State Key Lab of ASIC & System, Fudan University, Shanghai 200433
Abstract:Resistive switching characteristics of CuxO films grown by plasma oxidation process at room temperature are investigated. Both bipolar and unipolar stable resistive switching behaviours are observed and confirmed by repeated current voltage measurements. It is found that the RESET current is dependent on SET compliance current. The mechanism behind this new phenomenon can be understood in terms of conductive filaments formation/rupture with the contribution of Joule heating.
Keywords:72.80.Ga  73.61.Ng
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