Temperature changes in the photoluminescence and the intrinsic absorption edge of the (Ga0.1In0.9)2Se3 crystal

The photoluminescence and the intrinsic absorption edge of the (Ga_0.1In_0.9)₂Se₃ uniaxial crystal are investigated in the temperature range 77–300 K. Exciton and impurity luminescence bands are revealed at low temperatures and the Urbach tail of the absorption edge is found in the temperature range under study. The temperature dependences of the spectral position and the half-width of the luminescence bands, as well as the optical pseudogap and the energy width of the absorption edge, are studied. The mechanisms of radiative recombination and light absorption and the processes of lattice disordering in the (Ga_0.1In_0.9)₂Se₃ crystal are discussed.