Band offsets of In0.30Ga0.70As/In0.29Al0.71As heterojunction grown on GaAs substrate |
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| Authors: | Shieh J-L Chyi J-I Lin R-J Lin R-M Pan J-W |
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| Institution: | Dept. of Electr. Eng., Nat. Central Univ., Chung-Li; |
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| Abstract: | Temperature-dependent current-voltage measurement was employed to study the band offsets of the In0.30Ga0.70As/In 0.29Al0.71As heterojunction. The conduction band discontinuity was determined to be 0.71±0.05 eV which corresponds to a conduction band offset to bandgap difference ratio ~0.66. The comparison between experimental and theoretical results is presented |
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