77K下工作的双层多晶硅发射区RCA器件和电路

研究了掺磷双层多晶硅 RCA器件和电路的制备工艺及其温度特性 .在工艺中采用自对准双极结构 ,生长一层 RCA超薄氧化层 ,并用快速热退火处理 RCA氧化层 .研制的多晶硅发射区 RCA晶体管不仅具有较低的电流增益 -温度依赖关系 ,而且还具有较快的工作速度 .首次制备出多晶硅发射区 RCA ECL静态二分频器在室温下其工作频率为 1.1— 1.2 GHz,在液氮温度下能够正常工作 ,工作频率可达 730 MHz.

Double-Polysilicon Emitter RCA Devices and ICs at 77K

The processing technologies and temperature characteristics of phosphorus-doped polysilicon emitter RCA devices and ICs are investigated.By adopting a self-aligned bipolar structure an ultra-thin interfacial oxide is grown deliberately by using RCA oxidation,which is treated by Rapid Thermal Annealing (RTA) in nitrogen atmosphere then.Double-polysilicon RCA transistors,with both less temperature dependence on current gain and higher cut-off frequency,are fabricated.Furthermore,the running frequency for the ECL static frequency divider constructed by double-polysilicon RCA transistors is 1 1-1 2GHz at room temperature,while it is 730MHz at the liquid nitrogen temperature.