On the nature of metal-semiconductor phase transition in vanadium dioxide |
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| Authors: | E. B. Shadrin A. V. Il’inskii |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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| Abstract: | The method of coercive temperature distribution function is used to prove that the metal-semiconductor temperature-induced phase transition in vanadium dioxide manifests itself as a Mott electronic transition. |
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