Infrared ellipsometry study of the oxidation mechanisms of hydrogenated amorphous silicon

A detailed study of the oxidation of plasma deposited amorphous silicon (a-Si : H) using infrared phase modulated ellipsometry (IRPME) is presented. a-Si : H is found to be resistant against air oxidation confirming previous measurements. A 5–6 Å thick oxide layer at the surface of a-Si : H is observed after a few months of exposure to air. The extreme sensitivity of IRPME is emphasized. In particular Si-O-Si and (O_n)Si-H stretching vibrations are identified at the film surface at the submonolayer level. The oxidation mechanisms are discussed. The weak reactivity of a-Si : H with atmosphere is correlated with the presence of a hydrogen rich thin layer at the top surface.