The donor bound exciton states in wurtzite GaN quantum dot |
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Affiliation: | 1. School of Mechanics and Electronics, Henan Institute of Science and Technology, Xinxiang 453007, China;2. Department of Physics, Henan Normal University, Xinxiang 453007, China |
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Abstract: | Based on the effective mass approximation, the donor bound exciton states in a wurtzite (WZ) GaN/AlGaN quantum dot (QD) are investigated by means of a variational method, including the strong built-in electric field effect due to the spontaneous and piezoelectric polarizations. Numerical results show that the donor bound exciton binding energy is highly dependent on the impurity position and QD size. In particular, we find that the donor bound exciton binding energy is insensitive to dot height when the impurity is located at the right boundary of the WZ GaN/AlGaN QD with large dot height. |
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