Third-order non-linear susceptibility in a three-level QD system |
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| Institution: | 1. Physics Department, Science College, Thi-Qar University, Nassiriya, Iraq;2. Physics Department, Science College, Babylon University, Hillah, Iraq;3. Physics Department, Science College, Al-Mustansiriyah University, Baghdad, Iraq;1. The Department of Physics, Guangxi Medical University, Nanning, Guangxi 530021, China;2. School of Physics and Electronics, Yancheng Teachers University, Yancheng 224051, PR China;1. Department of Physics, Selcuk University, 42075 Konya, Turkey;2. Materials Science Department, School of Natural Sciences, University of Patras, Patras 265 04, Greece;1. Departamento de Física, Universidade Federal da Paraíba, Caixa Postal 5008, 58051-970 João Pessoa, PB, Brazil;2. Centro de Ciências e Tecnologia Agroalimentar, Universidade Federal de Campina Grande, 58840-000 Pombal, PB, Brazil;1. Department of Physics, Faculty of Science, Qom University of Technology, Qom, Iran;2. Department of Mathematics, Faculty of Science, Qom University of Technology, Qom, Iran;1. Faculty of Technology, Department of Optical Engineering, Sivas Cumhuriyet University, 58140 Sivas, Turkey;2. Centro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos, Mexico;3. Faculty of Science, Department of Physics, Sivas Cumhuriyet University, 58140 Sivas, Turkey;4. Faculty of Education, Department of Mathematical and Natural Science Education, Sivas Cumhuriyet University, 58140 Sivas, Turkey;5. Faculty of Science, Department of Physics, Dokuz Eylül University, 35160 Buca, İzmir, Turkey |
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| Abstract: | Third-order non-linear susceptibility is derived for a three-level quantum dot system. Then the total absorption (linear and non-linear) for InGaAsP three-level quantum dot systems is calculated at various parameters (wetting layer composition, pump power, quantum size effect and dephasing linewidth). The spectral hole appears at low power with increasing Ga mole-fraction in the wetting layer. |
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