| Te掺杂超宽带隙隧穿结研究 |
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| 引用本文： | 陆宏波,沈静曼,李欣益,张玮,周大勇,孙利杰,陈开建.Te掺杂超宽带隙隧穿结研究[J].半导体学报,2014,35(10):103003-3. |
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| 作者姓名： | 陆宏波 沈静曼 李欣益 张玮 周大勇 孙利杰 陈开建 |
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| 摘 要： | 研究制备得到峰值电流密度为65.3A/cm2的GaInP/AlGaAs宽带隙隧穿结和峰值电流密度为6.1A/cm2的AlGaInP/AlGaAs超宽带隙隧穿结。在隧穿结中使用二乙基碲（DETe）作为n型掺杂剂，实验中研究了材料生长温度、阀门开关处理以及DETe的流量等生长参数。采用预掺杂和升温后处理的方式来解决碲源的开关效应，而Te掺杂引入的晶格失配采用应力平衡技术来消除。另外研究了不同DETe流量下制备得到的隧穿结性能。
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| 关 键 词： | 宽带隙，太阳电池，隧穿结 |
| 收稿时间： | 1/2/2014 12:00:00 AM |
| 修稿时间： | 4/1/2014 12:00:00 AM |
Te doped ultrabroad band tunnel junction |
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| Lu Hongbo,Shen Jingman,Li Xinyi,Zhang Wei,Zhou Dayong,Sun Lijie and Chen Kaijian.Te doped ultrabroad band tunnel junction[J].Chinese Journal of Semiconductors,2014,35(10):103003-3. |
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| Authors: | Lu Hongbo Shen Jingman Li Xinyi Zhang Wei Zhou Dayong Sun Lijie and Chen Kaijian |
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| Institution: | Research Center for Photovoltaics, Shanghai Institute of Space Power-Source, Shanghai 200245, China;Research Center for Photovoltaics, Shanghai Institute of Space Power-Source, Shanghai 200245, China;Research Center for Photovoltaics, Shanghai Institute of Space Power-Source, Shanghai 200245, China;Research Center for Photovoltaics, Shanghai Institute of Space Power-Source, Shanghai 200245, China;Research Center for Photovoltaics, Shanghai Institute of Space Power-Source, Shanghai 200245, China;Research Center for Photovoltaics, Shanghai Institute of Space Power-Source, Shanghai 200245, China;Research Center for Photovoltaics, Shanghai Institute of Space Power-Source, Shanghai 200245, China |
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| Abstract: | A GaInP/AlGaAs broadband tunnel junction (TJ) with a peak current density of 65.3 A/cm2 and an AlGaInP/AlGaAs ultrabroad band TJ with a peak current density of 6.1 A/cm2 were studied and fabricated. Diethyltellurium (DETe) was chosen as an n-type dopant in the TJ. The growth temperature, valve switching and flow variation parameters of DETe were studied for better performance. Measurements, including predoping of DETe before growth and heating up reactor temperature after growth, were taken to deal with the effect of turn-on and off of tellurium. The strain balance method was used to the manage lattice mismatch that was introduced by the tellurium. Various flows of DETe were studied to get the appropriate value needed to fabricate a high peak current density tunnel junction. |
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| Keywords: | tunnel junction solar cell broadband |
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