| Ka波段360度低损耗模拟移相器 |
| |
| 引用本文： | 曹梦逸,卢阳,魏家行,郑佳欣,马晓华,郝跃.Ka波段360度低损耗模拟移相器[J].半导体学报,2014,35(10):105005-5. |
| |
| 作者姓名： | 曹梦逸 卢阳 魏家行 郑佳欣 马晓华 郝跃 |
| |
| 摘 要： | 在本文中，我们提出了一种新的反射型宽带360度MMIC模拟移相器。该移相器是基于矢量合成理论设计的，由三个Lange耦合器组成，制作工艺为标准的0.25微米GaAs工艺。我们采用4个4×40微米的GaAs HEMT作为反射负载。为了抵消器件的寄生电容，我们将一条起电感作用的微带线与器件并联，使得反射负载表现为纯阻性，并同时减小了移相器的插入损耗。为了减小芯片面积，我们采用折叠式的Lange耦合器。得到的MMIC移相器芯片面积仅为2.0×1.2 mm2。测试结果显示，在27GHz到32GHz的频率范围内，移相器的插入损耗为5.0 dB ± 0.8 dB，实现了360度连续移相，并且直流功率损耗为0。
|
| 关 键 词： | 模拟移相器，Lange耦合器，MMIC，并联电感 |
Ka-band full-360° analog phase shifter with low insertion loss |
| |
| Cao Mengyi,Lu Yang,Wei Jiaxing,Zheng Jiaxin,Ma Xiaohua and Hao Yue.Ka-band full-360° analog phase shifter with low insertion loss[J].Chinese Journal of Semiconductors,2014,35(10):105005-5. |
| |
| Authors: | Cao Mengyi Lu Yang Wei Jiaxing Zheng Jiaxin Ma Xiaohua and Hao Yue |
| |
| Institution: | Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
| |
| Abstract: | |
| |
| Keywords: | analog phase shifter Lange coupler MMIC parallel inductance |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
| 点击此处可从《半导体学报》下载免费的PDF全文 |
|
