Features of the Temperature Dependence of Graphene Oxide Resistivity |
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Authors: | A. A. Babaev M. E. Zobov E. I. Terukov V. S. Levitskii |
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Affiliation: | 1.Amirkhanov Institute of Physics, Dagestan Science Center,Russian Academy of Sciences,Makhachkala,Russia;2.Ioffe Institute,St. Petersburg,Russia |
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Abstract: | The Raman spectra and the temperature dependence of the resistivity of graphene oxide grown upon continuous heating and cooling on a glass substrate is studied in air in the temperature interval of 300–550 K. It is established that the intensity of the D-peak falls relative to the G-peak, the maximum of which shifts toward lower frequencies in Raman spectra. Partial removal of oxygen-containing functional groups is accompanied by a reduction in resistivity from 5.6 × 109 to 5.4 × 109 Ω. In the temperature intervals of 300–350 K and 300–375 K, the resistivity is constant upon graphene oxide heating and cooling, respectively. |
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