Quantitative analysis of the elemental composition and electron concentration in AlGaN/GaN heterostructures with a two-dimensional electron channel by means of SIMS and C-V profiling |
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| Authors: | M. N. Drozdov N. V. Vostokov V. M. Danil’tsev E. V. Demidov Yu. N. Drozdov O. I. Khrykin V. I. Shashkin |
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| Abstract: | The elementary composition and electron concentration in series of delta doped heterostructures Al X Ga1 − X N/GaN with a two-dimensional electron channel are investigated. Separation of the electron channel and the doping Si admixture is shown by a combination of SIMS and C-V profiling. |
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