Quantum well based on graphene and narrow-gap semiconductors |
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| Authors: | P. V. Ratnikov and A. P. Silin |
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| Affiliation: | (1) Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, S7N 5A9 Saskatoon, SK, Canada;(2) Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, S7N 5A9 Saskatoon, SK, Canada;(3) School of Engineering and Logistics, Faculty of Technology, B-41, Charles Darwin University, Ellengowan Drive, 0909 Darwin, NT, Australia;(4) Materials Science and Engineering, Electrical and Computer Engineering, University of Toronto, 170 College Street, M5S 3E4 Toronto, Canada;(5) Faculty of Engineering, University of Regina, 3737 Wascana Parkway, S4S 0A2 Regina, SK, Canada |
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| Abstract: | The energy spectrum of a planar quantum well formed by two narrow-gap semiconductor strips with a graphene strip inserted between them was considered. It was shown that the gapless mode arises only in the case of inverted narrow-gap semiconductors. Taking into account the graphene specificity, the spin splitting of the energy spectrum of the asymmetric quantum well was calculated. Interface states and optical transitions were studied. It was shown that optical transitions are possible only with parity conservation. |
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