Measurement of mass attenuation coefficients for holmium doped and undoped layered semiconductors InSe at different energies and the validity of mixture rule for crystals around the absorption edge |
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| Authors: | S. Erzeneo?lu,B. Gü rbulak |
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| Affiliation: | a Department of Physics, Faculty of Arts and Sciences, Atatürk University, 25240 Erzurum, Turkey
b Department of Physics Education, Education Faculty of Erzincan, Atatürk University, Sciences, 24030 Erzincan, Turkey |
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| Abstract: | The mass attenuation coefficients of InSe and InSe having different holmium concentrations were measured in the energy region 15.746-40.930 keV using a Si(Li) detector. InSe and InSe:holmium(0.0025), InSe:holmium(0.0050), InSe:holmium(0.025) and InSe:holmium(0.05) crystals were grown by the Bridgman-Stocbarger method. The measured values are compared with the theoretical ones obtained using WinXcom which is a Windows version of XCOM. The measurement of mass attenuation coefficients of ternary semiconductors is very important because of its use in technology. |
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| Keywords: | Mass attenuation coefficients Semiconductors Energy dispersive X-ray spectrometry |
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