Photoluminescence evolution in self-ion-implanted and annealed silicon |
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Authors: | Yang Yu Wang Chong Yang Rui-Dong Li Liang and Xiong Fei |
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Institution: | Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091, China; School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA |
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Abstract: | Si+ ion-implanted silicon wafers are annealed
at different temperatures from room temperature to 950~℃ and then
characterized by using the photoluminescence (PL) technique at
different recorded temperatures (RETs). Plentiful optical features
are observed and identified clearly in these PL curves. The PL
spectra of these samples annealed in different temperature ranges
are correspondingly dominated by different emission peaks. Several
characteristic features, such as an R line, S bands, a W line, the
phonon-assistant W^\rm TA and Si^\rm TO peaks, can be
detected in the PL spectra of samples annealed at different
temperatures. For the samples annealed at 800~\du, emission
peaks from the dislocations bounded at the deep energy levels of the
forbidden band, such as D_1 and D2 bands, can be observed at a
temperature as high as 280~K. These data strongly indicate that a
severe transformation of defect structures could be manipulated by
the annealing and recorded temperatures. The deactivation energies of
the main optical features are extracted from the PL data at
different temperatures. |
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Keywords: | photoluminescence silicon self-ion-implanted defects |
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