Electron paramagnetic resonance of deep boron acceptors in 4H-SiC and 3C-SiC crystals

EPR spectra of deep boron in 4H-SiC and 3C-SiC crystals have been observed and studied. Two sites in 4H-SiC produced deep-boron EPR signals, quasi-cubic k and hexagonal h. In both cases the deep-boron center symmetry is close to axial along the c crystal axis, and the g factor anisotropy is about an order of magnitude larger than that for shallow boron centers. In the 3C-SiC crystal, the deep-boron symmetry is also close to axial along one of the four 〈111〉 directions. The model proposed for the deep boron center with acceptor properties is B_Si-v _C, where B_Si is the boron substituting for silicon, and v _C is the carbon vacancy, with the B_Si-v _C direction coinciding in 4HSiC with the hexagonal axis of the crystal for both k and h positions. In the cubic 3C-SiC crystal, there are four equivalent deep boron centers, which represent B_Si-v _C pairs with the bond directed along one of the four 〈111〉 crystal directions. Fiz. Tverd. Tela (St. Petersburg) 40, 36–40 (January 1998)