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Erbium in silicon–germanium quantum wells |
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| Authors: | A T Naveed M Q Huda K F Abd El-Rahman J Hartung J H Evans-Freeman A R Peaker D C Houghton C Jeynes W P Gillin |
| Institution: | a Centre for Electronic Materials, Dept. EE&E, University of Manchester Institute of Science and Technology, PO Box 88, Sackville St., Manchester, M60 1QD, UK b SiGe Microsystems Inc, Ottawa, Canada K1A OR6 c University of Surrey, Guildford, UK |
| Abstract: | Strained Si1?xGex/Si quantum wells have been doped with erbium by implantation. A comparison is made with strained Si1?xGex/Si quantum wells and relaxed Si1?xGex, with x between 10% and 25%, doped with erbium during MBE growth. The erbium concentration was between 1×1018 and 5×1018 cm?3 throughout the active regions. Transmission electron microscopy, X-ray diffraction, and photoluminescence studies indicate that good regrowth can been achieved after full amorphisation by implantation of the strained quantum wells. The erbium luminescence is more intense in the Si1?xGex/Si layers, but erbium-implanted samples containing Si1?xGex exhibit defect luminescence in the region of 0.9–1.0 eV. These defects are also present when Si1?xGex/Si quantum wells are implanted with an amorphising dose of silicon, and then regrown. They are attributed to small germanium-rich platelets, rather than to erbium-related defects. Electroluminescence is presented from a forward biased erbium-implanted Si0.87Ge0.13/Si structure at a drive current density of only 1.8 mA/cm2. |
| Keywords: | Erbium LED Silicon–germanium Rare earth |
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