| Abstract: | Enhancement of light extraction in a GaInN light-emitting diode(LED)employing an omni-directional reflector(ODR)consisting of GaN,SnO2 nanorod and an Ag layer was presented.The ODR comprises a transparent,quaxterwave layer of SnO2 nanorod claded by silver and serves as an ohmic contact to p-type were prepared by dip-coating technique.The average size of the spherical SnO2 particles obtained is 200 nm.The refractive index of the nanorod SnO2 film layer is 2.01.The GaInN LEDs with GaN/SnO2/Ag ODR show a lower forward voltage.This was attributed to the enhanced reflectivity of the ODR that employs the nanorod SnO2 film layer.Experimental results show that ODR-LEDs have lower optical losses and higher extraction efficiency as compared to conventional LEDs with Ni/Au contacts and conventional LEDs employing a distributed Bragg reflector(DBR). |
