Sesquialkoxide von Gallium und Indium |
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| Authors: | Soheila Chitsaz,Effat Iravani,Bernhard Neumü ller |
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| Abstract: | Sesquialkoxides of Gallium and Indium Treatment of GaMe3 with one equivalent of HOcHex in toluene at 20 °C leads to [Me2GaOcHex]2 ( 4 ) under evolution of methane. The reaction of InMe3 with two equivalents of HOcHex leads under similar conditions not to [MeIn(OcHex)2]n but to the sesquialkoxide [In{Me2In(OcHex)2}3] ( 5 ). 5 can be described also as [{Me2InOcHex)}2{MeIn(OcHex)2}2]. The use of an excess of cyclohexanol in boiling toluene gives the same result. Under these reflux conditions, the reaction of GaMe3 with an excess of PhCH2OH leads exclusively to another type of sequialkoxides, [Ga{MeGa(OCH2Ph)3}3] ( 6 ). 4 — 6 were characterized by NMR, vibrational and MS spectra, as well as by X‐ray structure determinations. According to this, 4 forms centrosymmetrical and therefore planar Ga2O2 four‐membered rings. 5 and 6 possess basically the same structural motif, central M3+ ion ( 5 : In3+; 6 : Ga3+) coordinated by three metalate units ( 5 : [Me2In(OcHex)2]—; 6 : [MeGa(OCH2Ph)3]—). The central M3+ ions have always coordination number (CN) six while the three surrounding metal ions possess CN 4. Because of the spectroscopic findings 6 must exist in two isomers (1:1). The C3‐symmetrical isomer C3‐ 6 was characterized by X‐ray analysis, while the isomer C1‐ 6 could by described mainly by the complex NMR data. |
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| Keywords: | Gallium Indium Sesquialkoxides Crystal structures |
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