Organometallic vapour phase epitaxy of galliumarsenide using Ga(CH3)3 · N(CH3)3-adduct as precursor

Epitaxial layers of GaAs have been grown by MOVPE using trimethylgallium-trimethylamin-adduct (TMGa-TMN) as the Ga-precursor. In comparison to the growth system using pure TMGa no significant influence on growth conditions and materials parameters could be found. The deposited GaAs is of fairly high quality with room temperature mobilities of 6700 cm²/Vs at free electron concentrations of about 1 × 10¹⁵ cm⁻³. No hints to nitrogen incorporation could be found.