|
|||||
|
|
VPE growth of InGaAS/InP structures using the hydride system |
|
| Authors: | B. Diegner T. Eberle K. Jacobs |
| Abstract: | Some results on the VPE growth of InGaAs/InP structures in the hydride system using a single chamber horizontal reactor are described. The effect of partial pressures of the reactant gases and bypass-HCl on epitaxial growth of InGaAs is discussed. The GaCl partial pressure was found to be the deciding growth parameter. |
| Keywords: | |