| Abstract: | Firstly, general considerations about microlithography and resists were presented, leading to the conclusion that positive resists seemed to be more suitable than negative resists to provide high resolution in electron-beam lithography and in X-ray lithography. Therefore, parameters affecting the sensitivity of positive resists to such types of radiation were outlined. Among these positive resists, poly (fluoroalkyl methacrylates) were shown to be interesting candidates, due to their enhanced radiation absorption. Thus, poly(1-, 1- dimethyl 2, 2, 3, 3-tetrafluoropropyl methacrylate) (called FBP resist) was synthesized and physico-chemically characterized. The lithographic performances of such a resist were evaluated both upon electron-beam and X-ray exposures. Its dry-etch resistance was also studied. Furthermore, fabrication of Field-Effect Transistors using this resist was demonstrated. |
