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Contribution to the Si doping of bridgeman GaAs |
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| Authors: | W. Siegel H. Boudriot H. Koi K. Deus O. Oettel H. A. Schneider |
| Abstract: | GaAs: Si with different doping level was grown by the gradient freeze method. The crystals were characterized by structural, electrical and optical methods concerning especially the dependence of the epd and the compensation degree on the carrier concentration. |
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