On the correlation of lattice defects to HUBER-etch pit morphologies on (001) surface of InP

Various analytical techniques (defect etching, optical microscopy, X-ray topography (XRT), cathodoluminescence (CL) were combined to get information about the real structure of Sn- and S-doped LEC InP. The S-pits, produced by the HUBER -etch, were not only caused by microdefects, as it was described in literature. We found a correlation between S-pits and special types of dislocations.