| Abstract: | Long-lifetime photoconductivity is observed in Czochralski-grown oxygen-rich heattreated n- and p-type silicon crystals. It appears due to a slow electron (in Cz n-Si) and hole (in Cz p-Si) recombination via two kinds of oxygen-induced recombination centres. Dependences of the long-lifetime photoconductivity on the oxygen content, excitation intensity and temperature are presented. Possible models to explain an appearance of the long-lifetime photoconductivity in Cz n- and p-Si are discussed. The data presented are important for understanding the long-time photoeffects in semiconductors and for elucidating the origin and structure of oxygen-induced recombination centres in silicon. |
