薄膜厚度对GZO透明导电膜及其LED器件性能的影响

采用射频磁控溅射的方法制备了GZO透明导电薄膜,通过原子力显微镜(AFM)、X射线衍射仪(XRD)、霍尔效应测试仪及紫外-可见光分光光度计等手段研究了厚度对于GZO薄膜性能的影响,并制备了相应的LED器件。实验结果表明:随着薄膜厚度增加,薄膜结晶质量提高,薄膜的电阻率也随之降低。当厚度为500 nm时,薄膜的电阻率最低为2.79×10^-4 Ω·cm,同时其在460 nm蓝光区域的光透过率高达97.9%。对所制备的以GZO薄膜为透明电极的LED器件进行了测试分析,发现GZO薄膜厚度对LED的正向电压影响不大,但对LED芯片的出光效率有较大影响。

Effect of The Film Thickness on The Performance of GZO Transparent Conductive Layer and LEDs with GZO Electrode

GZO transparent conductive films were prepared by RF magnetron sputtering. The influence of thickness on GZO films was studied by several methods, including atomic force microscopy, XRD, Hall Effect tester and UV-Vis spectrophotometer. LEDs with GZO transparent conductive layers were also fabricated. These results show that, as the thickness increases, the crystal quality is improved and the resistivity of the film is reduced. When the thickness reached 500 nm, the lowest resistivity of 2.79×10^-4 Ω·cm and the highest transmittance of 97.9% at 460 nm wavelength were obtained. However, the variation of film thickness has little effect on the forward voltage of LED. But it is an important factor on improving the light extraction efficiency of LEDs.