| SiN插入层对GaN外延膜应力和光学质量的影响 |
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| 引用本文： | 宋世巍,梁红伟,申人升,柳阳,张克雄,夏晓川,杜国同. SiN插入层对GaN外延膜应力和光学质量的影响[J]. 发光学报, 2013, 34(8): 1017-1021. DOI: 10.3788/fgxb20133408.1017 |
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| 作者姓名： | 宋世巍 梁红伟 申人升 柳阳 张克雄 夏晓川 杜国同 |
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| 作者单位： | 1. 大连理工大学 物理与光电工程学院, 辽宁 大连 116024;2. 中国科学院上海微系统与信息技术研究所 信息功能材料国家重点实验室, 上海 200050;3. 吉林大学 电子科学与工程学院, 吉林 长春 130012 |
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| 基金项目： | 国家自然科学基金(60976010,61076045,11004020);国家863项目(2011AA03A102);中央高校项目(DUT12LK22,DUT11LK43,DUT11RC(3)45);高等学校博士学科点专项科研基金(20110041120045)资助项目 |
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| 摘 要： | 研究了MOCVD系统中原位SiN插入层对GaN薄膜应力和光学性质的影响。采用SiN插入层后,GaN薄膜的裂纹数量大大减少,薄膜所承受的张应力得到了一定的释放。同时,GaN薄膜的缺陷密度降低一倍,晶体质量得到了极大的改善。研究表明,位错密度的降低在GaN薄膜中留存较大的残余应力,补偿了降温过程中所引入的张应力。同样,随着SiN插入层的应用,低温PL谱的半峰宽降低,薄膜光学质量提高。最后研究了PL谱发光峰与应力的关系,得到了一个-13.8的线性系数。
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| 关 键 词： | SiN 应力弛豫 插入层 |
| 收稿时间： | 2013-02-08 |
Influence of In-situ SiNx Interlayer on Strain Relief and Optical Character of GaN Epilayer Grown on 6H-SiC |
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| SONG Shi-wei,LIANG Hong-wei,SHEN Ren-sheng,LIU Yang,ZHANG Ke-xiong,XIA Xiao-chuan,DU Guo-tong. Influence of In-situ SiNx Interlayer on Strain Relief and Optical Character of GaN Epilayer Grown on 6H-SiC[J]. Chinese Journal of Luminescence, 2013, 34(8): 1017-1021. DOI: 10.3788/fgxb20133408.1017 |
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| Authors: | SONG Shi-wei LIANG Hong-wei SHEN Ren-sheng LIU Yang ZHANG Ke-xiong XIA Xiao-chuan DU Guo-tong |
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| Affiliation: | 1. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China;2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;3. College of Electronic Science and Engineering, Jilin University, Changchun 130012, China |
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| Abstract: | High quality GaN epilayers have been grown on 6H-SiC substrate by metal organic chemical vapor deposition (MOCVD) using an in situ porous SiNx interlayer. It was found that the SiNx interlayer played a very important role in strain relief and the enhancement of quality of GaN epilayer. Optical microscope studies revealed that the crack line density was reduced to 0.29 mm-1. Furthermore, the in-plane stress of 1.58×10-3 was measured by Raman spectra, representing a significant strain relief. The relaxation was assisted by the reduction of dislocation density. Finally, a linear coefficient characterizing the relationship between the band gap and the biaxial stress of the GaN epilayer was obtained. |
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| Keywords: | SiN strain relief insertion layer |
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