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Spin-tunneling magnetoresistive elements based on multilayered nanostructures
Authors:Amelichev  V. V.  Belyakov  P. A.  Vasil’ev  D. V.  Zhukov  D. A.  Kazakov  Yu. V.  Kostyuk  D. V.  Orlov  E. P.  Kasatkin  S. I.  Krikunov  A. I.
Affiliation:1.Innovation and Technology Center of the National Research University of Electronic Technology, Zelenograd, 124498, Russia
;2.Trapeznikov Institute of Control Sciences, Russian Academy of Sciences, Moscow, 117997, Russia
;3.OOO NPK Fotron-Avto, Moscow, 117105, Russia
;
Abstract:Technical Physics - The results of studies of characteristics of spin-tunneling magnetoresistive (STMR) elements fabricated from multilayered nanostructures using a mask technique have been...
Keywords:
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