1.Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia ;2.Novosibirsk State University, Novosibirsk, 630090, Russia ;
Abstract:
JETP Letters - A nonmonotonic behavior of band bending φ S as a function of cesium coverage ? on the Cs/GaAs(001) surface is observed in the form of several maxima and minima. This...