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Unoccupied Electron States and the Formation of Interface between Films of Dimethyl-Substituted Thiophene–Phenylene Coolygomers and Oxidized Silicon Surface |
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| Authors: | Komolov A S Lazneva E F Gerasimova N B Panina Yu A Zashikhin G D Pshenichnyuk S A Borshchev O V Ponomarenko S A Handke B |
| Institution: | 1.St. Petersburg State University, St. Petersburg, 199034, Russia ;2.Institute of Molecules and Crystals, Subdivision of the Ufa Federal Research Centre of the Russian Academy of Sciences, pr. Oktyabrya 151, Ufa, Bashkortostan, 450075, Russia ;3.Enikopolov Institute of Synthetic Polymeric Materials, Russian Academy of Sciences, Moscow, 117393, Russia ;4.Moscow State University, Moscow, 119991, Russia ;5.Faculty of Material Science and Ceramics, AGH University of Science and Technology, Kraków, Poland ; |
| Abstract: | Physics of the Solid State - The unoccupied electron states and the boundary potential barrier during deposition of ultrathin films of dimethyl-substituted thiophene–phenylene coolygomers of... |
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