Switching and memory effects in composite films of semiconducting polymers with particles of graphene and graphene oxide

The effects of switching were investigated in composite films based on multifunctional polymers. i.e., derivatives of carbazole (PVK) and fluorene (PFD), as well as based on particles of graphene (Gr) and graphene oxide (GO). The concentration of Gr and GO particles in the PVK(PFD) matrix was varied in the range of 2–3 wt %, which corresponded to the percolation threshold in these systems. The atomic composition of the composite films PVK: GO was examined using X-ray photoelectron spectroscopy. It was found that the effect of switching in structures of the form Al/PVK(PFD): GO(Gr)/ITO/PET manifests itself in a sharp change of the electrical resistance of the composite film from a low-conducting state to a relatively high-conducting state when applying a bias to Al-ITO electrodes of ∼0.1–0.3 V (E ∼ 3–5 × 10⁴ V/cm), which is below the threshold switching voltages for similar composites. The mechanism of resistance switching, which is associated with the processes of capture and accumulation of charge carriers by Gr (GO) particles introduced into the matrices of the high-molecular-weight (PVK) and relatively low-molecular-weight (PFD) polymers, was discussed.