Townsend coefficient and efficiency of the formation of runaway electrons in neon |
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Authors: | A N Tkachev A A Fedenev S I Yakovlenko |
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Institution: | (1) General Physics Institute, Russian Academy of Sciences, ul. Vavilova 3, Moscow, 119991, Russia |
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Abstract: | Basic ionization and drift properties are simulated for neon by the method of multiparticle dynamics. This calculation revealed
that, in neon—in just the same way as in other gases that were studied previously—the Townsend ionization regime is realized
even in strong fields if the distance between electrodes is rather large. The dependences of basic ionization and drift properties
on the reduced electric-field strength are obtained. The results agree with available experimental data. The escape curve
separating the region of efficient electron multiplication from the region in which electrons leave the discharge gap without
undergoing multiplication is found for neon. The efficiency of the formation of a runaway-electron beam in helium and neon
is simulated. |
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Keywords: | |
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