Strain Effects on Electronic Properties of Boron Nitride Nanoribbons |
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Authors: | LI Jin SUN Li-Zhong ZHONG Jian-Xin |
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Affiliation: | Laboratory for Quantum Engineering and Micro-Nano Energy Technology, Xiangtan University, Xiangtan 411105 Department of Physics, Xiangtan University, Xiangtan 411105 |
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Abstract: | We investigate the strain effects on the electronic properties of boron nitride nanoribbons (BNNRs) by using first-principles calculations. The results show that the energy gap of BNNRs with both armchair edges (A-BNNRs) and zigzag edges (Z-BNNRs) decreases as the strain increases. As strain increases, the energy gaps of Z-BNNRs decrease rapidly as the width increases and reduce significantly to small values, which makes Z-BNNRs change from wide-gap to narrow-gap semiconductors. |
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Keywords: | 71.15.Mb 73.22.-f 62.23.Kn 68.60.Bs |
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