| 10位CMOS数模转换器在中子和γ混合环境下的综合辐射效应 |
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| 引用本文： | 刘岩,杨善潮,林东生,崔庆林,陈伟,龚建成,王桂珍,白小燕,郭晓强.10位CMOS数模转换器在中子和γ混合环境下的综合辐射效应[J].强激光与粒子束,2010,22(9). |
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| 作者姓名： | 刘岩 杨善潮 林东生 崔庆林 陈伟 龚建成 王桂珍 白小燕 郭晓强 |
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| 作者单位： | 1. 西北核技术研究所， 西安 710024； 2. 中国电子科技集团公司 第二十四研究所， 重庆 400060 |
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| 基金项目： | 国家重点实验室基金项目 |
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| 摘 要： | 研究了在反应堆中子和γ射线综合辐照环境下CMOS工艺10位数模转换器(DAC)的辐射效应。通过对DAC在γ辐射环境、中子辐射环境、中子和γ混合辐射环境以及中子预辐照后进行γ射线辐照下的效应对比发现,在中子和γ混合辐射环境下会产生电离总剂量效应加剧现象,即一定混合程度的中子和γ同时辐照会增强CMOS器件的辐射效应。
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| 关 键 词： | 综合辐射效应 中子和γ混合环境 CMOS数模转换器 电离总剂量效应 位移损伤 |
| 收稿时间： | 1900-01-01; |
Synergistic effect of neutron and gamma irradiation on 10-bit CMOS digital-to-analog converter |
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| Liu Yan,Yang Shanchao,Lin Dongsheng,Cui Qinglin,Chen Wei,Gong Jiancheng,Wang Guizhen,Bai Xiaoyan,Guo Xiaoqiang.Synergistic effect of neutron and gamma irradiation on 10-bit CMOS digital-to-analog converter[J].High Power Laser and Particle Beams,2010,22(9). |
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| Authors: | Liu Yan Yang Shanchao Lin Dongsheng Cui Qinglin Chen Wei Gong Jiancheng Wang Guizhen Bai Xiaoyan Guo Xiaoqiang |
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| Institution: | 1.Northwest Institute of Nuclear Technology, P. O. Box 69-10, Xi’an 710024, China; 2. Sichuan Institute of Solid State Circuits, China Electronics Technology Group Corporation, Chongqing 400060, China |
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| Abstract: | This paper presents the experiment results of the combined irradiation by neutron and gamma ray on SDA9760, a 10-bit CMOS digital-to-analog converter. The electrical and functional tests were conducted in four types of irradiation: neutron, gamma ray, combined irradiation of neutron and gamma ray, and gamma ray after neutron irradiation. The experiment results show that the mixed neutron and gamma irradiation can induce a synergistic effect on the sample, i.e. the increase of total ionizing dose effect. Compared with neutron or gamma ray radiation, the device exhibits considerably severer degradation under neutron and gamma synergistic irradiation. |
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| Keywords: | mixed neutron and γ environment CMOS digital-to-analog converter total ionizing dose effects displacement damage |
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