Conductivity compensation and deep traps in epitaxial n-GaAs irradiated by electrons

A study has been made of electrophysical properties and deep traps in epitaxial n-GaAs grown by the chloride method and irradiated by electrons in the temperature range (20–500)°C. It is shown that the natural conductivity of GaAs is attained at irradiation temperatures of 20°C due to the introduction of E traps, and for 300°CT_irr500°C of high-temperature P traps, presumably defect clusters.V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 57–60, October, 1992.