| 化学气相沉积法制备Sn2S3一维纳米结构阵列 |
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| 引用本文： | 彭跃华,周海青,刘湘衡,何熊武,赵丁,海阔,周伟昌,袁华军,唐东升. 化学气相沉积法制备Sn2S3一维纳米结构阵列[J]. 物理化学学报, 2011, 27(5): 1249-1253. DOI: 10.3866/PKU.WHXB20110430 |
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| 作者姓名： | 彭跃华 周海青 刘湘衡 何熊武 赵丁 海阔 周伟昌 袁华军 唐东升 |
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| 作者单位： | Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha 410081, P. R. China |
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| 基金项目： | 教育部新世纪优秀人才支持计划，湖南省杰出青年基金，湖南省自然科学基金，湖南师范大学青年优秀人才培养计划 |
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| 摘 要： | 运用化学气相沉积法(CVD), 直接以Sn和S为原料分区加热蒸发, 通过控制温度分布、气压、载气流量和金属铅纳米颗粒分布等宏观实验条件, 成功制备大面积Sn2S3一维纳米结构阵列. 扫描电子显微镜(SEM)图片显示: Sn2S3一维纳米结构的横向尺度在100 nm左右, 长约几个微米. X射线衍射（XRD）谱显示: 所制备样品的晶体结构属于正交晶系, 沿[002]方向生长. 紫外-可见漫反射谱表明Sn2S3一维纳米结构是带隙为2.0 eV的直接带隙半导体. 讨论了温度分布和金属铅纳米颗粒对Sn2S3一维纳米结构生长的影响, 并指出其生长可能遵循气-固(V-S)生长机理.
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| 关 键 词： | 一维纳米结构 阵列 化学气相沉积法 三硫化二锡 气-固生长机理 |
| 收稿时间： | 2010-10-25 |
| 修稿时间： | 2011-03-14 |
Preparation of Sn2S3 One-Dimensional Nanostructure Arrays by Chemical Vapor Deposition |
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| PENG Yue-Hua,ZHOU Hai-Qing,LIU Xiang-Heng,HE Xiong-Wu,ZHAO Ding,HAI Kuo,ZHOU Wei-Chang,YUAN Hua-Jun,TANG Dong-Sheng. Preparation of Sn2S3 One-Dimensional Nanostructure Arrays by Chemical Vapor Deposition[J]. Acta Physico-Chimica Sinica, 2011, 27(5): 1249-1253. DOI: 10.3866/PKU.WHXB20110430 |
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| Authors: | PENG Yue-Hua ZHOU Hai-Qing LIU Xiang-Heng HE Xiong-Wu ZHAO Ding HAI Kuo ZHOU Wei-Chang YUAN Hua-Jun TANG Dong-Sheng |
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| Affiliation: | Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha 410081, P. R. China |
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| Abstract: | We prepared large-area, vertically aligned Sn2S3 one-dimensional nanostructure arrays using tin and sulfur powder as reactants on a lead-plated silicon substrate by chemical vapor deposition (CVD). Scanning electron microscopy (SEM) showed that these Sn2S3 nanowires had diameters around 100 nm and lengths of several microns. X-ray diffraction (XRD) results indicated that the obtained Sn2S3 nanowires were composed of an orthorhombic phase with very good crystallinity, and grow in the [002] direction. Ultravi... |
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| Keywords: | One-dimensional nanostructure Array Chemical vapor deposition Sn2S3 Vapor-solid growth mechanism |
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