Grafting cavitands on the Si(100) surface |
| |
Authors: | Condorelli Guglielmo G Motta Alessandro Favazza Maria Fragalà Ignazio L Busi Marco Menozzi Edoardo Dalcanale Enrico Cristofolini Luigi |
| |
Affiliation: | Dipartimento di Scienze Chimiche, Università degli Studi di Catania, and INSTM UdR di Catania, viale A. Doria 6, 95100 Catania, Italy. |
| |
Abstract: | Cavitand molecules having double bond terminated alkyl chains and different bridging groups at the upper rim have been grafted on H-terminated Si(100) surface via photochemical hydrosilylation of the double bonds. Pure and mixed monolayers have been obtained from mesitylene solutions of either pure cavitand or cavitand/1-octene mixtures. Angle resolved high-resolution X-ray photoelectron spectroscopy has been used as the main tool for the monolayer characterization. The cavitand decorated surface consists of Si-C bonded layers with the upper rim at the top of the layer. Grafting of pure cavitands leads to not-well-packed layers, which are not able to efficiently passivate the Si(100) surface. By contrast, monolayers obtained from cavitand/1-octene mixtures consist of well-packed layers since they prevent silicon oxidation after aging. AFM measurements showed that these monolayers have a structured topography, with objects protruding from the Si(100) surface with average heights compatible with the expected ones for cavitand molecules. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|