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Grafting cavitands on the Si(100) surface
Authors:Condorelli Guglielmo G  Motta Alessandro  Favazza Maria  Fragalà Ignazio L  Busi Marco  Menozzi Edoardo  Dalcanale Enrico  Cristofolini Luigi
Affiliation:Dipartimento di Scienze Chimiche, Università degli Studi di Catania, and INSTM UdR di Catania, viale A. Doria 6, 95100 Catania, Italy.
Abstract:Cavitand molecules having double bond terminated alkyl chains and different bridging groups at the upper rim have been grafted on H-terminated Si(100) surface via photochemical hydrosilylation of the double bonds. Pure and mixed monolayers have been obtained from mesitylene solutions of either pure cavitand or cavitand/1-octene mixtures. Angle resolved high-resolution X-ray photoelectron spectroscopy has been used as the main tool for the monolayer characterization. The cavitand decorated surface consists of Si-C bonded layers with the upper rim at the top of the layer. Grafting of pure cavitands leads to not-well-packed layers, which are not able to efficiently passivate the Si(100) surface. By contrast, monolayers obtained from cavitand/1-octene mixtures consist of well-packed layers since they prevent silicon oxidation after aging. AFM measurements showed that these monolayers have a structured topography, with objects protruding from the Si(100) surface with average heights compatible with the expected ones for cavitand molecules.
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