| 不同极性6H-SiC表面石墨烯的制备及其电子结构的研究 |
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| 引用本文： | 康朝阳,唐军,李利民,潘海斌,闫文盛,徐彭寿,韦世强,陈秀芳,徐现刚.不同极性6H-SiC表面石墨烯的制备及其电子结构的研究[J].物理学报,2011,60(4):47302-047302. |
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| 作者姓名： | 康朝阳 唐军 李利民 潘海斌 闫文盛 徐彭寿 韦世强 陈秀芳 徐现刚 |
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| 作者单位： | (1)山东大学晶体材料国家重点实验室,济南 250100; (2)中国科学技术大学国家同步辐射实验室,合肥 230029 |
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| 基金项目： | 国家自然科学基金(批准号: 50872128,50802053)资助的课题. |
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| 摘 要： | 在超高真空设备中,采用高温退火的方法在6H-SiC两个极性面(0001)和(000 1 - )面(即Si面和C面)外延石墨烯(EG). 利用低能电子衍射(LEED)和同步辐射光电子能谱(SRPES)对样品的生长过程进行了原位研究,而后利用激光拉曼光谱(Raman)和近边X射线吸收精细结构(XANES)等实验技术对制备的样品进行了表征. 结果表明我们在两种极性面均制备出了质量较好的石墨烯样品. 而有关两种石墨烯的对比性研究发现:Si面EG呈同一取向而C面EG呈各向异性;Si面EG与衬底存在类似
关键词：
石墨烯
6H-SiC
同步辐射
电子结构
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| 关 键 词： | 石墨烯 6H-SiC 同步辐射 电子结构 |
| 收稿时间： | 2010-10-09 |
Preparation of graphene on different-polarity 6H-SiC substrates and the study of their electronic structures |
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| Kang Chao-Yang,Tang Jun,Li Li-Min,Pan Hai-Bin,Yan Wen-Sheng,Xu Peng-Shou,Wei Shi-Qiang,Chen Xiu-Fang,Xu Xian-Gang.Preparation of graphene on different-polarity 6H-SiC substrates and the study of their electronic structures[J].Acta Physica Sinica,2011,60(4):47302-047302. |
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| Authors: | Kang Chao-Yang Tang Jun Li Li-Min Pan Hai-Bin Yan Wen-Sheng Xu Peng-Shou Wei Shi-Qiang Chen Xiu-Fang Xu Xian-Gang |
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| Institution: | National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029,China;National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029,China;National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029,China;National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029,China;National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029,China;National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029,China;National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029,China;State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China |
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| Abstract: | The epitaxial graphene (EG) layers are grown on Si-terminated 6H-SiC (0001) substrates and C-terminated 6H-SiC (000 1 - ) substrates separately by thermal annealing in an ultrahigh vacuum chamber. Low energy electron diffraction(LEED) and synchrotron radiation photoelectron spectroscopy(SRPES) are used to in-situ study the synthesis process, and the prepared samples are characterized by Raman spectrum, and near edge X-ray absorption fine structure(XANEX). The results show that we have successfully prepared high-quality EG layers on the two polar surfaces of 6H-SiC. The comparisons studies indicate that Si terminated EG is highly oriented while C terminated EG is anisotropic, and that the interface interaction similar to that of C-sp3 bond of diamond exists on the Si terminated EG, the interaction between the epitaxial film and substrate is stronger, while on the C terminated EG there is no such interaction, and the interaction between the epitaxial film and substrate is weaker. |
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| Keywords: | graphene 6H-SiC synchrotron radiation electronic structure |
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